Semiconductor device

ABSTRACT

A module including a carrier and a semiconductor chip applied to the carrier. An external contact element is provided having a first portion and a second portion extending perpendicular to the first portion, wherein a thickness of the second portion is smaller than a thickness of the carrier.

CROSS-REFERENCE TO RELATED APPLICATIONS

This Utility Patent Application is a divisional application and claimsthe benefits of U.S. application Ser. No. 11/779,731, entitled“Semiconductor Device”, filed Jul. 18, 2007, the entire content of whichis herein incorporated by reference.

BACKGROUND

This invention relates to a semiconductor device and a method ofassembling thereof.

Power semiconductor chips may, for example, be integrated intosemiconductor devices. Power semiconductor chips are suitable inparticular for the switching or control of currents and/or voltages.

For these and other reasons there is a need for the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present invention and are incorporated in andconstitute a part of this specification. The drawings illustrate theembodiments of the present invention and together with the descriptionserve to explain the principles of the invention. Other embodiments ofthe present invention and many of the intended advantages of the presentinvention will be readily appreciated as they become better understoodby reference to the following detailed description. The elements of thedrawings are not necessarily to scale relative to each other. Likereference numerals designate corresponding similar parts.

FIGS. 1A to 1C schematically illustrate a module 100 in a cross sectionand a plan view according to an exemplary embodiment.

FIG. 2 schematically illustrates a device 200 in a cross sectionaccording to an exemplary embodiment.

FIG. 3 schematically illustrates a module 300 in a plan view accordingto an exemplary embodiment.

FIG. 4 schematically illustrates a module 400 in a cross sectionaccording to an exemplary embodiment.

FIG. 5 schematically illustrates a module 500 in a cross sectionaccording to an exemplary embodiment.

FIG. 6 schematically illustrates a module 600 in a cross sectionaccording to an exemplary embodiment.

FIGS. 7A to 7E schematically illustrate an exemplary embodiment of amethod to fabricate a module 700.

FIGS. 8A to 8G schematically illustrate an exemplary embodiment of amethod to fabricate a module 800.

DETAILED DESCRIPTION

In the following Detailed Description, reference is made to theaccompanying drawings, which form a part hereof, and in which is shownby way of illustration specific embodiments in which the invention maybe practiced. In this regard, directional terminology, such as “top,”“bottom,” “front,” “back,” “leading,” “trailing,” etc., is used withreference to the orientation of the Figure(s) being described. Becausecomponents of embodiments of the present invention can be positioned ina number of different orientations, the directional terminology is usedfor purposes of illustration and is in no way limiting. It is to beunderstood that other embodiments may be utilized and structural orlogical changes may be made without departing from the scope of thepresent invention. The following detailed description, therefore, is notto be taken in a limiting sense, and the scope of the present inventionis defined by the appended claims.

Modules with a semiconductor chip applied to a carrier are describedbelow. The carrier may be of any shape, size or material. During thefabrication of the module the carrier may be provided in a way thatother carriers are arranged in the vicinity and are connected byconnection means or a connector to the carrier with the purpose ofseparating the carriers. The carrier may be fabricated from metals ormetal alloys, in particular copper, copper alloys, aluminum, aluminumalloys, or other materials. It may further be electrically conductive.The carrier may be, for example, a lead-frame or a part of a lead-frame,such as a die pad. Furthermore, in some embodiments the carrier may alsobe manufactured of a ceramic material, such as aluminum oxide, and thecarrier may be electrically insulating in this case.

The modules described below include external contact elements. Theexternal contact elements may be accessible from outside the module andmay thus allow electrical contact to be made with the semiconductorchips from outside the module. Furthermore, the external contactelements may be thermally conductive and may serve as heat sinks fordissipating the heat generated by the semiconductor chips. The externalcontact elements may be composed of any desired electrically conductivematerial, for example of a metal, such as copper, aluminum or gold, ametal alloy or an electrically conductive organic material.

Surfaces of the carrier and/or one or more of the external contactelements may form an assembly plane. The assembly plane may serve tomount the module onto another component, such as a circuit board forexample.

The semiconductor chips described below may be of extremely differenttypes and may include for example integrated electrical orelectro-optical circuits. The semiconductor chips may be, for example,configured as power transistors, power diodes, control circuits,microprocessors or microelectromechanical components. In particular,semiconductor chips having a vertical structure may be involved, that isto say that the semiconductor chips may be fabricated in such a way thatelectric currents can flow in a direction perpendicular to the mainsurfaces of the semiconductor chips. A semiconductor chip having avertical structure may have contact elements in particular on its twomain surfaces, that is to say on its top side and bottom side. Inparticular, power transistors and power diodes may have a verticalstructure. By way of example, the source terminal and gate terminal of apower transistor and the anode terminal of a power diode may be situatedon one main surface, while the drain terminal of the power transistorand the cathode terminal of the power diode are arranged on the othermain surface. A power diode may be embodied in particular as a Schottkydiode. Furthermore, the modules described below may include integratedcircuits to control the integrated circuits of other semiconductorchips, for example, the integrated circuits of power transistors orpower diodes. The semiconductor chips need not be manufactured fromspecific semiconductor material and, furthermore, may contain inorganicand/or organic materials that are not semiconductors, such as forexample insulators, plastics or metals. Moreover, the semiconductorchips may be packaged or unpackaged.

The modules may include a mold material covering at least parts of thecomponents of the modules. The mold material may be any appropriatethermoplastic or thermosetting material. Various techniques may beemployed to cover the components with the mold material, for examplecompression molding or injection molding.

FIG. 1A illustrates a module 100 in a cross section as an exemplaryembodiment. The module 100 includes a semiconductor chip 10, which ismounted on a carrier 11. The module 100 further includes an externalcontact element 12, which has a first portion 13 and a second portion14, wherein the second portion 14 is arranged perpendicular to the firstportion 13. The carrier 11 has a thickness d₁, which is greater than athickness d₂ of the second portion 14 of the external contact element12.

Moreover, the module 100 may include an external contact element 15 witha first and a second portion forming a right angle similar to theexternal contact element 12. Electrically conductive layers 16 and 17may be deposited on top of the carrier 11 and the external contactelements 12 and 15. The electrically conductive layers 16 and 17 may beembedded in dielectric layers 18 and 19. The semiconductor chip 10 mayhave contact pads 20, 21 as well as 22 and may be mounted onto theelectrically conductive layer 17 with its contact pads 20, 21 and 22facing the electrically conductive layer 17. The semiconductor chip 10may be covered with a mold material 23.

The carrier 11 and the external contact elements 12 and 15 may bemanufactured from an electrically conductive material and may be used toelectrically couple the semiconductor chip 10 to components external tothe module 100. For this purpose, the contact pads 20 to 22 areelectrically connected to the carrier 11 and the external contactelements 12 and 15 via the electrically conductive layers 16 and 17 asillustrated in FIG. 1A.

The semiconductor chip 10 may be a power semiconductor chip, inparticular a power transistor. In the latter case, the contact pads 20and 22 may be the source and drain terminal, respectively, and thecontact pad 21 may be the gate terminal.

The carrier 11 and at least the first portions of the external contactelements 12 and 15 may, for example, be part of a leadframe. Theleadframe may be fabricated, for example, from copper or an iron-nickelalloy. The bottom surfaces of the carrier 11 and the external contactelements 12 and 15 may form an assembly plane for mounting the device100 on external components.

In addition to the carrier 11, the first portion 13 of the externalcontact element 12 may also have a greater thickness than the secondportion 14. The external contact element 15 may have the same geometryand dimensions as the external contact element 12. Furthermore, it maybe provided that the carrier 11 has a greater thickness than the firstportion 13 of the external contact element 13. The thickness of thecarrier 11 and the first portions of the external contact elements 12and 15 may be in the range between 100 μm and 2 mm. The thickness of thesecond portion of the external contact elements 12 and 15 may be in therange between 5 μm and 500 μm and in particular in the range between 10μm and 50 μm.

The second portion 14 of the external contact element 12 may reach up tothe top surface of the mold material 23, but may also be smaller. Inparticular, the height of the second portion 14 may be in the rangebetween half of the height of the mold material 23 and the full heightof the mold material 23. The height of the second portion 14 of theexternal contact element 12 may be greater than the height of thecarrier 11. The height of the second portion 14 may also be greater thanthe height of the first portion 13 of the external contact element 12when the height is measured in a direction perpendicular to the assemblyplane.

In FIGS. 1B and 1C two different implementations of the module 100 areschematically illustrated in a plan view. Here, only the top surface ofthe mold material 23 and the external contact elements 12 and 15 areillustrated. In the embodiment of FIG. 1B each of the second portions ofthe external contact elements 12 and 15 cover only the bottom surfaceand one side surface of the mold material 23. It may be provided that upto 30 or 40 or 50 or 60 or 70 or 80 or 90 or 100% of the respective sidesurface of the mold material 23 are covered by the respective externalcontact element 12 or 15. In the embodiment of FIG. 1C the externalcontact elements 12 and 15 additionally cover parts of the adjacent sidesurfaces of the mold material 23.

The exposed surfaces of the external contact elements 12 and 15 and thecarrier 11 may be used to electrically couple the module 100 to othercomponents. This is exemplarily illustrated in FIG. 2. There, an excerptof a device 200 is schematically illustrated which includes the module100 that is mounted onto a circuit board 24, for example a PCB (PrintedCircuit Board). The exposed surfaces of the external contact elements 12and 15 and the carrier 11 may have been soldered to contact areas of thecircuit board 24. Thereby the exposed surfaces of the second portions ofthe external contact elements 12 and 15 may have also be covered withsolder material 25. The second portions of the external contact elements12 and 15 increase the contact area available for contacting with thecircuit board 24. Using the side surfaces of the module 100 asadditional contact surface enables higher currents to flow from and tothe module 100. Furthermore, the base area of the module 100 may bedecreased while keeping the maximum allowed current flowing through thedrain and source terminals constant. It may, for example, be providedthat each of the external contact elements 12 and 15 have an exposedsurface of at least 0.5 mm² if currents are higher than 10 A.

The second portions of the external contact elements 12 and 15 coveringthe side surfaces of the module 100 may also be used to dissipate theheat generated by the semiconductor chip 10. For example, a heat sink orcooling element may be attached or thermally coupled to the secondportions of the external contact elements 12 and 15.

FIG. 3 illustrates a module 300 in a plan view as a further exemplaryembodiment. Similar to the external contact elements 12 and 15 of themodule 100, the module 300 includes several external contact elements 26and 27 which cover parts of the bottom surface and the side surfaces ofthe module 300. The module 300 may contain more than one semiconductorchips, for example two power transistors. In the latter case, theexternal contact elements 26 may serve as source and drain terminals ofone of the power transistors and the external contact elements 27 may bethe source and drain terminals of the other power transistor.

FIG. 4 illustrates a module 400 in a cross section as a furtherexemplary embodiment. The module 400 includes a power semiconductor chip40 and a control semiconductor chip 41, which are mounted on a carrier42. The module 400 further includes a first external contact element 43and a second external contact element 44 coupled to the powersemiconductor chip 40 and the control semiconductor chip 41,respectively. The bottom surfaces of the carrier 42 and the externalcontact elements 43 and 44 form an assembly plane for mounting thedevice 400 on external components. The first and second external contactelements 43 and 44 extend in a direction 45 perpendicular to theassembly plane, wherein the extension of the first external contactelement 43 in the direction 45 is greater than the extension of thesecond external contact element 44. A portion of the first externalcontact element 43 may form at least one side surface of the module 400.

The power semiconductor chip 40 may be a vertical power semiconductor,in particular a power transistor or a power diode. In case of thesemiconductor chip 40 being a power transistor, its drain electrode 46may be electrically connected to the carrier 42, which may beelectrically conductive. On the main surface of the power transistor 40facing away from the carrier 42, the source electrode 47 and the gateelectrode 48 are placed. One or more bond wires or other connectionelements, such as clips, may electrically connect the source electrode47 to the first external contact element 43. The gate electrode 48 maybe connected to a contact pad 49 of the control semiconductor chip 41.Another contact pad 50 of the control semiconductor chip 41 may beconnected to the second external contact element 44. The function of thecontrol semiconductor chip 41 may be to control the power semiconductorchip 40. An electrically insulating layer 51 may be arranged between thecontrol semiconductor chip 41 and the carrier 42 thereby electricallyinsulating the control semiconductor chip 41 from the electricallyconductive carrier 42. In one exemplary embodiment, the electricallyinsulating layer 51 may be glue, a foil or a piece of ceramic. Thesemiconductor chips 40 and 41 may be covered with a mold material 52.

The enlarged surface of the first external contact element 43 may beuseful when high currents flow through the source electrode 47 of thepower semiconductor chip 40. The first external contact element 43 andin particular its portion covering one or more side surfaces of the moldmaterial 52 may also help to dissipate heat generated by thesemiconductor chips 40 and 41.

FIG. 5 illustrates a module 500 in a cross section as a furtherexemplary embodiment. The module 500 includes a ceramic carrier 60,which is for example manufactured from Al₂O₃ or another electricallyinsulating ceramic material. External contact elements 61, 62 and 63 areapplied to the bottom and top surfaces as well as at least some of theside surfaces of the ceramic carrier 60. The external contact elements61 to 63 may be fabricated from a metal, such as copper, gold oraluminum, or a metal alloy or another electrically conductive material.

On top of the upper portions of the external contact elements 61 and 62a semiconductor chip 64 is placed. The semiconductor chip 64 may be apower transistor having a drain electrode 65, a source electrode 66 anda gate electrode 67. The drain electrode 65 and the source electrode 66may be attached to the external contact elements 61 and 62,respectively, for example by using reflow soldering, vacuum soldering,diffusion soldering or adhesive bonding by using an electricallyconductive adhesive. The gate electrode 67 may be connected to theexternal contact element 63 via a contact element 68 arranged on the topsurface of the ceramic carrier 60 and a via hole 69 filled with anelectrically conductive material.

The top surface of the ceramic carrier 60 including the semiconductorchip 64 may be covered with a mold material 70 leaving the side surfacesof the ceramic carrier 60, on which the external contact elements 61 and62 are attached, uncovered. This makes it possible to coat the sidesurfaces of the ceramic carrier with solder material (similar to FIG. 2)when mounting the module 500 on another component, such as a circuitboard.

In FIG. 6 a module 600 is schematically illustrated which is a variationof the module 500. In contrast to the module 500, the ceramic carrier 60of the module 600 is mounted on a leadframe 71 which is similar to theleadframe 11, 12, 15 of FIG. 1A and which has portions extending into adirection perpendicular to the assembly plane. Furthermore, no externalcontact elements are placed on the side surfaces of the ceramic carrier60 of the module 600. Instead, the leadframe 71 serves as externalcontact element. Furthermore, the ceramic carrier of the module 600 hastwo additional via holes 72 and 73 filled with an electricallyconductive material. Each of the via holes 69, 72 and 73 is covered witha respective contact pad 74 on the top surface and the bottom surface ofthe ceramic carrier 60. The electrically conductive via holes 69, 72 and73 as well as the contact pads 74 connect the source, drain and gateelectrodes of the semiconductor chip 64 to the respective parts of theleadframe 71. The contact pads 74 as well as the material deposited inthe via holes 69, 72 and 73 may be a metal, such as copper, gold oraluminum, or a metal alloy or another electrically conductive material.

In FIGS. 7A to 7G different stages of the fabrication of a module 700are exemplarily illustrated. In order to manufacture the module 700,first a leadframe is provided including external contact elements 75 and76 as well as a carrier 77 as illustrated in FIG. 7A. Each of theexternal contact elements 75 and 76 has a first portion forming anassembly plane together with the carrier 76 and a second portionextending perpendicular to the assembly plane. The leadframe may bemanufactured from a metal, for example copper, or an alloy, for exampleiron nickel. The leadframe may have been stamped or milled in order togenerate the recess formed by the external contact elements 75 and 76.Alternatively, the ends of the external contact elements 75 and 76 mayhave been bent upwardly to obtain the shape as illustrated in FIG. 7A.

The upper surface of the carrier 77 and portions of the external contactelements 75 and 76 form a plane on which an electrically insulating foil78 is deposited to bridge the gaps between the carrier 77 and theexternal contact elements 75 and 76 and to act as a platform for thedeposition of further layers (see FIG. 7B). The electrically insulatingfoil 78 may, for example, be laminated onto the carrier 77 and theexternal contact elements 75 and 76 and may be structured as illustratedin FIG. 7B by a stamping process, laser ablation or any other suitableprocess known to a person skilled in the art. The electricallyinsulating foil 78 may be manufactured from a plastic or syntheticmaterial or any other suitable material.

The holes generated in the electrically insulating foil 78 may be filledwith a metal or a metal alloy layer 79 (see FIG. 7C). Then a dielectriclayer 80, for example a silicon nitride or photoresist layer, may bedeposited on the electrically insulating foil 78 and may be structured.The holes in the dielectric layer 80 may be filled with a metal or ametal alloy layer 81. The layers 79 and 81 may be generated byelectroless and/or galvanic plating processes. Alternatively, otherdeposition methods, such as physical vapor deposition, chemical vapordeposition, sputtering, spin-on processes, spray depositing or ink jetprinting may also be used. Copper, iron, nickel or other metals or metalalloys may be used as material. The thickness of the layers 79 and 81may be in the range from 10 μm to 1 mm, in particular in the range from50 μm to 150 μm.

A semiconductor chip 82 is mounted onto the layer 81 with its contactpads facing the layer 81 (see FIG. 7D). In case the semiconductor chip82 is a power transistor its contact pads are source, drain and gateelectrodes and are connected to the sections of the layer 81. Theelectrical connection between the electrodes of the power transistors 82and the layer 81 may, for example, be produced by reflow soldering,vacuum soldering, diffusion soldering or adhesive bonding by using anelectrically conductive adhesive.

If diffusion soldering is used as a connecting technique, it is possibleto use solder materials which lead to intermetallic phases after the endof the soldering operation at the interface between the power transistor82 and the layer 81 on account of interface diffusion processes. In thiscase, the use of AuSn, AgSn, CuSn, AgIn, AuIn or CuIn solders isconceivable. If the power transistor 82 is adhesively bonded to thelayer 81, it is possible to use conductive adhesives which may be basedon epoxy resins and be enriched with gold, silver, nickel or copper inorder to produce the electrical conductivity.

A mold material 83 is used to encapsulate the module 700 (see FIG. 7E).The mold material 83 may encapsulate any portion of the module 700, butleaves the outer surfaces of the external contact elements 75 and 76 aswell as the carrier 77 uncovered. The mold material 83 may be composedof any appropriate thermoplastic or thermosetting material, inparticular it may be composed of material commonly used in contemporarysemiconductor packaging technology. Various techniques may be employedto cover the components of the module 700 with the mold material 83, forexample compression molding or injection molding.

The module 700 is identical to the module 100 illustrated in FIG. 1 withthe exception that there are no limitations regarding the thickness ofthe side portions of the external contact elements 75 and 76. Thus, theside portions of the external contact elements 75 and 76 may have thesame thickness or may be even thicker than the carrier 77.

In FIGS. 8A to 8G different stages of the fabrication of a module 800are exemplarily illustrated. The fabrication method illustrated in FIGS.8A to 8G is a variation of the fabrication method illustrated in FIGS.7A to 7E. In contrast to the method of FIGS. 7A to 7E, in the presentembodiment a leadframe is provided including external contact elements84 and 85 as well as a carrier 86 which may have essentially coplanartop and bottom surfaces (see FIG. 8A). The fabrication processes of themodule 800 illustrated in FIGS. 8B to 8E may be similar or identical tothe fabrication processes illustrated in FIG. 7B to 7E.

After the encapsulation of the module 800 with a mold material 87, someof the side surfaces of the mold material 87 may be covered with anelectrically conductive seed layer 88 (see FIG. 8F). An electrolessdeposition method may be used to produce the seed layer 88. The seedlayer 88 may have a thickness of up to 1 μm and may for example be madeof zinc.

The electrical conductivity of the seed layer 88 may be used togalvanically deposit an electrically conductive layer 89 on the seedlayer 88. The electrically conductive layer 89 may, for example, consistof copper and may have a thickness of up to 100 μm and in particular inthe range between 1 μm and 10 μm. During the galvanic deposition of theelectrically conductive layer 89, the external contact elements 84 and85 may serve as electrodes.

The seed layer 88 and the electrically conductive layer 89 areelectrically connected to the respective external contact elements 84and 85 so that they can serve as the side portions of the externalcontact elements 84 and 85 similar to the external contact elements 12and 15 of the device 100 illustrated in FIG. 1A. As an alternative tothe electroless and galvanic deposition of the layers 88 and 89, otherdeposition methods, such as physical vapor deposition, chemical vapordeposition, sputtering, spin-on processes, spray depositing or ink jetprinting, may be employed to deposit an electrically conductive layer onat least one side surface of the mold material 87.

In addition, while a particular feature or aspect of an embodiment ofthe invention may have been disclosed with respect to only one ofseveral implementations, such feature or embodiment may be combined withone or more other features or embodiments of the other implementationsas may be desired and for any given or particular application.Furthermore, to the extent that the terms “include”, “have”, “with”, orother variants thereof are used in either the detailed description orthe claims, such terms are intended to be inclusive in a manner similarto the term “comprise”. The terms “coupled” and “connected”, along withderivatives may have been used. It should be understood that these termsmay have been used to indicate that two elements co-operate or interactwith each other regardless whether they are in direct physical orelectrical contact, or they are not in direct contact with each other.Furthermore, it should be understood that embodiments of the inventionmay be implemented in discrete circuits, partially integrated circuitsor fully integrated circuits or programming means. Also, the term“exemplary” is merely meant as an example, rather than the best oroptimal. It is also to be appreciated that features and/or elementsdepicted herein are illustrated with particular dimensions relative toone another for purposes of simplicity and ease of understanding, andthat actual dimensions may differ substantially from that illustratedherein.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments illustrated and describedwithout departing from the scope of the present invention. Thisapplication is intended to cover any adaptations or variations of thespecific embodiments discussed herein. Therefore, it is intended thatthis invention be limited only by the claims and the equivalentsthereof.

1. A method for forming a semiconductor device, comprising: providing acarrier and an external contact element having a first portion and asecond portion extending perpendicular to the first portion; and placinga semiconductor chip on the carrier.
 2. The method of claim 1, furthercomprising: depositing a mold material on the semiconductor chip, andproviding the second portion of the external contact element having aheight in the range between about half the height of the mold materialand about full height of the mold material.
 3. The method of claim 2,further comprising delimiting extension of the mold material with thesecond portion of the external contact element.
 4. The method of claim1, further comprising: depositing an electrically insulating layer onthe carrier and the external contact element to bridge a gap between thecarrier and the external contact element.
 5. The method of claim 1,further comprising placing the semiconductor chip on the first portionof the external contact element.
 6. The method of claim 1, furthercomprising forming a leadframe with the carrier and the external contactelement by stamping milling or bending the parts of the leading.
 7. Themethod of claim 1, further comprising providing the second portion ofthe external contact element having a thickness smaller than a thicknessof the carrier.
 8. The method of claim 1, further comprising providingthe second portion of the external contact element having a thicknesssmaller than a thickness of the first portion of the external contactelement.
 9. The method of claim 1, further comprising defining anassembly plane with the carrier and the first portion of the externalcontact element.
 10. The method of claim 1, further comprising coveringthe second portion of the external contact element with a soldermaterial.
 11. The method of claim 1, wherein the semiconductor chip is apower semiconductor chip.
 12. The method of claim 1, further comprisingproviding the second portion of the external contact element having aheight greater than a height of the carrier.
 13. The method of claim 1,further comprising providing the second portion of the external contactelement having a height greater than a height of the first portion ofthe external contact element.
 14. The method of claim 1, furthercomprising placing the carrier on a circuit board and covering thesecond portion of the external contact element with a solder material.15. A method for forming a semiconductor device, comprising: providing acarrier and an external contact element; placing a semiconductor chip onthe carrier; depositing a mold material on the semiconductor chip; anddepositing an electrically conductive material on a side surface of themold material, wherein the electrically conductive material iselectrically coupled to the external contact element.
 16. The method ofclaim 15, further comprising depositing the electrically conductivematerial on a side surface of the mold material galvanically.
 17. Themethod of claim 15, wherein the electrically conductive material iscoupled to the external contact element by welding or soldering.
 18. Themethod of claim 15, further comprising providing the carrier and theexternal contact element with coplanar top and bottom surfaces.
 19. Themethod of claim 15, further comprising depositing an electricallyinsulating layer on the carrier and the external contact element tobridge a gap between the carrier and the external contact element. 20.The method of claim 15, further comprising depositing the electricallyconductive material on the side surface of the mold material to athickness smaller than a thickness of the carrier.
 21. The method ofclaim 15, further comprising defining an assembly plane with the carrierand the external contact element.
 22. The method of claim 15, furthercomprising covering the electrically conductive material deposited onthe side surface of the mold material with a solder material.
 23. Themethod of claim 15, further comprising depositing the electricallyconductive material on the side surface of the mold material to athickness smaller than a thickness of the external contact element. 24.The method of claim 15, further comprising depositing the electricallyconductive material on the side surface of the mold material to a heightgreater than a height of the carrier.
 25. The method of claim 15,further comprising depositing the electrically conductive material onthe side surface of the mold material to a height greater than theheight of the external contact element.